Silicon-Germanium Strained Layers and Heterostructures

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Description

The study of Silicone Germanium strained layers has broad implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices.

Since the publication of the original volume in 1994, there has been a steady flow of new ideas, new understanding, new Silicon-Germanium (SiGe) structures and new devices with enhanced performance.

Written for both students and senior researchers, the 2nd edition of Silicon-Germanium Strained Layers and Heterostructures provides an essential up-date of this important topic, describing in particular the recent developments in technology and modelling.

Details

ISBN: 9780127521831
Authors: M. Willander, Suresh C. Jain
Language: Română
Publication Year: 2003
Format: Hardcover
Publisher: Elsevier Science
Pages: 322
Weight: 640gr

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